PJS6801 Datasheet, PDF (1/6 Pages) Pan Jit International Inc. – 30V P-Channel Enhancement Mode MOSFET

PPJS6801
30V P-Channel Enhancement Mode MOSFET
Voltage
-30 V Current
-3.2A
Features
 RDS(ON) , VGS@-10V, ID@-3.2A<74mΩ
 RDS(ON) , VGS@-4.5V, ID@-2.3A<83mΩ
 RDS(ON) , VGS@-2.5V, ID@-1.4A<115mΩ
 Advanced Trench Process Technology
 Specially Designed for Switch Load, PWM Application, etc.
 Lead free in compliance with EU RoHS 2011/65/EU
directive.
 Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
 Case: SOT-23 6L-1 Package
 Terminals: Solderable per MIL-STD-750, Method 2026
 Approx. Weight: 0.0005 ounces, 0.014 grams
SOT-23 6L-1
Unit : inch(mm)
Maximum
Ratings
and
Thermal
Characteristics
o
(T_A=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
T_a=25^oC
Derate above 25^oC
Operating Junction and Storage Temperature Range
Typical Thermal resistance
- Junction to Ambient ^{(Note 3)}
SYMBOL
V_DS
V_GS
I_D
I_DM
P_D
T_J,T_STG
R_θJA
LIMIT
-30
+12
-3.2
-13
1.25
10
-55~150
100
UNITS
V
V
A
A
W
mW/ ^oC
o_C
o_C/W
May 6,2015-REV.03
Page 1