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PJS6800 Datasheet, PDF (1/6 Pages) Pan Jit International Inc. – 30V N-Channel Enhancement Mode MOSFET | |||
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PPJS6800
30V N-Channel Enhancement Mode MOSFET
Voltage
30 V
Current
3.9A
Features
ï¬ RDS(ON) , VGS@10V, ID@3.9A<48mâ¦
ï¬ RDS(ON) , VGS@4.5V, ID@3.2A<53mâ¦
ï¬ RDS(ON) , VGS@2.5V, ID@2.5A<66mâ¦
ï¬ Advanced Trench Process Technology
ï¬ Specially Designed for Switch Load, PWM Application, etc
ï¬ Lead free in compliance with EU RoHS 2011/65/EU directive.
ï¬ Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
ï¬ Case: SOT-23 6L-1 Package
ï¬ Terminals : Solderable per MIL-STD-750, Method 2026
ï¬ Approx. Weight: 0.0005 ounces, 0.014 grams
ï¬ Marking: ST0
SOT-23 6L-1
Unit : inch(mm
Maximum
Ratings
and
Thermal
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Ta=25oC
Derate above 25oC
Operating Junction and Storage Temperature Range
Typical Thermal resistance
- Junction to Ambient (Note 3)
SYMBOL
VDS
VGS
ID
IDM
PD
TJ,TSTG
RθJA
LIMIT
30
+12
3.9
15.6
1.25
10
-55~150
100
UNITS
V
V
A
A
W
mW/ oC
oC
oC/W
December 31,2014-REV.03
Page 1
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