|
PJS6601 Datasheet, PDF (1/9 Pages) Pan Jit International Inc. – 20V Complementary Enhancement Mode MOSFET | |||
|
PPJS6601
20V Complementary Enhancement Mode MOSFET
Voltage 20 / -20V Current 4.1 /-3.1A
SOT-23 6L
Features
ï¬ Advanced Trench Process Technology
ï¬ Specially Designed for Switch Load, PWM Application, etc.
ï¬ Lead free in compliance with EU RoHS 2011/65/EU
directive
ï¬ Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
ï¬ Case: SOT-23 6L Package
ï¬ Terminals: Solderable per MIL-STD-750, Method 2026
ï¬ Approx. Weight: 0.0005 ounces, 0.014 grams
ï¬ Marking: SC1
Unit: inch(mm)
Maximum
Ratings
and
Thermal
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 4)
Power Dissipation
Ta=25oC
Derate above 25oC
Operating Junction and Storage Temperature Range
Typical Thermal Resistance
- Junction to Ambient (Note 3)
SYMBOL N-Ch LIMIT P-Ch LIMIT
VDS
20
-20
VGS
+12
+12
ID
4.1
-3.1
IDM
16.4
-12.4
1.25
PD
10
TJ,TSTG
-55~150
RθJA
100
UNITS
V
V
A
A
W
mW/ oC
oC
oC/W
September 18,2015-REV.00
Page 1
|
▷ |