PJS6600 Datasheet, PDF (1/9 Pages) Pan Jit International Inc. – 30V Complementary Enhancement Mode MOSFET – ESD Protected

PPJS6600
30V Complementary Enhancement Mode MOSFET – ESD Protected
Voltage 30 / -30V Current 1.6 /-1.1A
SOT-23 6L
Features
 Advanced Trench Process Technology
 Specially Designed for Switch Load, PWM Application, etc.
 ESD Protected 2KV HBM
 Lead free in compliance with EU RoHS 2011/65/EU
directive
 Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
 Case: SOT-23 6L Package
 Terminals: Solderable per MIL-STD-750, Method 2026
 Approx. Weight: 0.0005 ounces, 0.014 grams
 Marking: SC0
Unit: inch(mm)
Maximum
Ratings
and
Thermal
Characteristics
o
(T_A=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current ^{(Note 4)}
Power Dissipation
T_a=25^oC
Derate above 25^oC
Operating Junction and Storage Temperature Range
Typical Thermal resistance
- Junction to Ambient ^{(Note 3)}
SYMBOL N-Ch LIMIT P-Ch LIMIT
V_DS
30
-30
V_GS
+8
+8
I_D
1.6
-1.1
I_DM
6.4
-4.4
1.25
P_D
10
T_J,T_STG
-55~150
R_θJA
100
UNITS
V
V
A
A
W
mW/ ^oC
o_C
o_C/W
January 22,2015-REV.03
Page 1