PJS6415AE Datasheet, PDF (1/6 Pages) Pan Jit International Inc. – 20V P-Channel Enhancement Mode MOSFET – ESD Protected

PPJS6415AE
20V P-Channel Enhancement Mode MOSFET – ESD Protected
Voltage
-20 V Current
-4.9A
SOT-23 6L-1
Features
 RDS(ON) , VGS@-10V, ID@-4.9A<60mΩ
 RDS(ON) , VGS@-4.5V, ID@-4.2A<70mΩ
 RDS(ON) , VGS@-2.5V, ID@-3.1A<96mΩ
 Advanced Trench Process Technology
 Specially Designed for Switch Load, PWM Application, etc
 ESD Protected 2KV HBM
 Lead free in comply with EU RoHS 2011/65/EU directives.
 Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
 Case: SOT-23 6L-1 Package
 Terminals : Solderable per MIL-STD-750, Method 2026
 Approx. Weight: 0.0003 ounces, 0.0084 grams
 Marking: S5E
Unit : inch(mm)
Maximum
Ratings
and
Thermal
Characteristics
o
(T_A=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
T_a=25^oC
Derate above 25^oC
Operating Junction and Storage Temperature Range
Typical Thermal resistance
- Junction to Ambient ^{(Note 3)}
SYMBOL
V_DS
V_GS
I_D
I_DM
P_D
T_J,T_STG
R_θJA
LIMIT
-20
+12
-4.9
-19.6
2
16
-55~150
62.5
UNITS
V
V
A
A
W
mW/ ^oC
o_C
o_C/W
April 29,2015-REV.01
Page 1