English
Language : 

PJS6405 Datasheet, PDF (1/6 Pages) Pan Jit International Inc. – 30V P-Channel Enhancement Mode MOSFET
PPJS6405
30V P-Channel Enhancement Mode MOSFET
Voltage
-30 V Current
-4.6A
Features
 RDS(ON) , VGS@-10V, ID@-4.6A<72mΩ
 RDS(ON) , VGS@-4.5V, ID@-3.0A<96mΩ
 Advanced Trench Process Technology
 Specially Designed for Switch Load, PWM Application, etc
 Lead free in compliance with EU RoHS 2011/65/EU
directive.
 Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
 Case: SOT-23 6L-1 Package
 Terminals: Solderable per MIL-STD-750, Method 2026
 Approx. Weight: 0.0005 ounces, 0.014 grams
 Marking: S05
SOT-23 6L-1
Unit :inch(mm)
Maximum
Ratings
and
Thermal
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Ta=25oC
Derate above 25oC
Operating Junction and Storage Temperature Range
Typical Thermal resistance
- Junction to Ambient (Note 3)
SYMBOL
VDS
VGS
ID
IDM
PD
TJ,TSTG
RθJA
LIMIT
-30
+20
-4.6
-18.4
2
16
-55~150
62.5
UNITS
V
V
A
A
W
mW/ oC
oC
oC/W
December 31,2014-REV.03
Page 1