PJS50N03 Datasheet, PDF (1/6 Pages) Pan Jit International Inc. – 30V N-CHANNEL ENHANCEMENT MODE MOSFET

PJS50N03
30V N-CHANNEL ENHANCEMENT MODE MOSFET
VOLTAGE ^{30 Volts}
CURRENT 2.9 Amperes
FEATURES
• R_DS(ON), V_GS@10V,I_D@3.1A< 57 mΩ
• R_DS(ON), V_GS@4.5V,I_D@2.8A< 94 mΩ
• Advanced Trench Process Technology
• High Density Cell Design For Ultra Low On-Resistance
• Specially Designed for DC/DC Converters
• Low Gate Charge
• Lead free in comply with EU RoHS 2002/95/EC directives.
• Green molding compound as per IEC61249 Std. . (Halogen Free)
MECHANICAL DATA
• Case: SOT-23 6L Package
• Terminals : Solderable per MIL-STD-750,Method 2026
• Apporx. Weight : 0.0003 ounces, 0.0084grams
• Marking : N03
MAXIMUM RATINGS AND THERMAL CHARACTERISTICS (T_A=25^OC unless otherwise noted )
PAR AME T E R
S YMB OL
Drain-Source Voltage
V_DS
Gate-Source Voltage
V _GS
Continuous Drain Current
Steady-State T_A=25^OC
I_D
Pulsed Drain Current
I_{D M}
Power Dissipation (Notes 1)
Steady-State T_A=25^OC
P_D
Typ i c a l The rma l Re s i s ta nc e (No te s 1)
R _{θJ A}
Op e ra ti ng J unc ti o n a nd S to ra g e Te m p e ra ture Ra ng e
T _J, T _{S TG}
NOTES:
1. Mounted on 7.5cm² FR-4 PCB .
LIMIT
30
+20
2.9
16
0.7
176
-55 to + 150
UNITS
V
V
A
A
W
O_{C /W}
O_C
March 19,2012-REV.00
PAGE . 1