PJQ5474A Datasheet, PDF (1/7 Pages) Pan Jit International Inc. – 100V N-Channel Enhancement Mode MOSFET

PPJQ5474A
100V N-Channel Enhancement Mode MOSFET
Voltage
100 V Current
18A
Features
 RDS(ON) , VGS@10V, ID@18A<50mΩ
 RDS(ON) , VGS@4.5V, ID@15A<55mΩ
 Advanced Trench Process Technology
 High density cell design for ultra low on-resistance
 Lead free in compliance with EU RoHS 2011/65/EU
directive
 Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
 Case: DFN5060-8L Package
 Terminals: Solderable per MIL-STD-750, Method 2026
 Approx. Weight: 0.0028 ounces, 0.08 grams
 Marking: Q5474A
DFN5060-8L
Maximum
Ratings
and
Thermal
Characteristics
o
(T_A=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulse Avalanche Energy ^{(Note 5)}
Power Dissipation
T_C=25^oC
Derate above 25^oC
Operating Junction and Storage Temperature Range
Typical Thermal resistance
- Junction to Ambient, t<10s ^{(Note 3)}
SYMBOL
V_DS
V_GS
I_D
I_DM
E_AS
P_D
T_J,T_STG
R_θJC
July 14,2015-REV.00
LIMIT
100
+20
18
36
16.2
52
416
-55~150
2.4
UNITS
V
V
A
A
mJ
W
mW/ ^oC
o_C
o_C/W
Page 1