PJQ5465A Datasheet, PDF (1/7 Pages) Pan Jit International Inc. – 60V P-Channel Enhancement Mode MOSFET

PPJQ5465A
60V P-Channel Enhancement Mode MOSFET
Voltage
-60 V Current
-16 A
DFN5060-8L
Features
 R_DS(ON), V_GS@-10V,I_D@-8A<48mΩ
 R_DS(ON), V_GS@-4.5V,I_D@-4A<65mΩ
 High switching speed
 Improved dv/dt capability
 Low Gate Charge
 Low reverse transfer capacitance
 Lead free in compliance with EU RoHS 2011/65/EU directive.
 Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
 Case: DFN5060-8L Package
 Terminals: Solderable per MIL-STD-750, Method 2026
 Approx. Weight: 0.0028 ounces, 0.08 grams
 Marking: Q5465A
Maximum
Ratings
and
Thermal
Characteristics
o
(T_A=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
T_C=25^oC
T_C=100^oC
Pulsed Drain Current ^{(Note 1)}
T_C=25^oC
Power Dissipation
T_C=25^oC
T_C=100^oC
Continuous Drain Current
T_A=25^oC
T_A=70^oC
Power Dissipation
T_A=25^oC
Power Dissipation
T_A=70^oC
Single Pulse Avalanche Energy ^{(Note 6)}
Operating Junction and Storage Temperature Range
Typical Thermal Resistance ^{(Note 4,5) Junction to Case}
Junction to Ambient
 Limited only By Maximum Junction Temperature
SYMBOL
V_DS
V_GS
I_D
I_DM
PD
I_D
PD
E_AS
T_J,T_STG
R_θJC
R_θJA
LIMIT
-60
+20
-16
-10
-64
25
10
-5.0
-4.0
2.0
1.3
51
-55~150
5.0
62.5
UNITS
V
V
A
W
A
A
W
mJ
o_C
o_C/W
July 21,2015-REV.00
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