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PJQ5460A Datasheet, PDF (1/7 Pages) Pan Jit International Inc. – 60V N-Channel Enhancement Mode MOSFET | |||
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PPJQ5460A
60V N-Channel Enhancement Mode MOSFET
Voltage
60 V
Current
20 A
DFN5060-8L
Features
ï¬ RDS(ON), VGS@10V,ID@10A<42mΩ
ï¬ RDS(ON), VGS@4.5V,ID@5A<52mΩ
ï¬ High switching speed
ï¬ Improved dv/dt capability
ï¬ Low reverse transfer capacitance
ï¬ Lead free in compliance with EU RoHS 2011/65/EU
directive.
ï¬ Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
ï¬ Case: DFN5060-8L Package
ï¬ Terminals: Solderable per MIL-STD-750, Method 2026
ï¬ Approx. Weight: 0.0028 ounces, 0.08 grams
ï¬ Marking: Q5460A
Maximum
Ratings
and
Thermal
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
TC=25oC
TC=100oC
Pulsed Drain Current (Note 1)
TC=25oC
Power Dissipation
TC=25oC
TC=100oC
Continuous Drain Current
TA=25oC
TA=70oC
Power Dissipation
TA=25oC
Power Dissipation
TA=70oC
Single Pulse Avalanche Energy (Note 6)
Operating Junction and Storage Temperature Range
Typical Thermal Resistance (Note 4,5) Junction to Case
Junction to Ambient
ï¬ Limited only By Maximum Junction Temperature
SYMBOL
VDS
VGS
ID
IDM
PD
ID
PD
EAS
TJ,TSTG
RθJC
RθJA
LIMIT
60
+20
20
13
80
41
16
4.6
3.7
2.0
1.3
20
-55~150
3.0
62.5
UNITS
V
V
A
W
A
A
W
mJ
oC
oC/W
July 14,2015-REV.00
Page 1
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