PJQ2888 Datasheet, PDF (1/7 Pages) Pan Jit International Inc. – 20V P-Channel Enhancement Mode MOSFET with TVS Diode

PPJQ2888
20V P-Channel Enhancement Mode MOSFET with TVS Diode
Voltage
-20 V Current
-1.5A
DFN2020-8L
Features
 RDS(ON) , VGS@-4.5V, ID@-1.5A<325mΩ
 RDS(ON) , VGS@-2.5V, ID@-1.2A<420mΩ
 RDS(ON) , VGS@-2.5V, ID@-0.5A<600mΩ
 Advanced Trench Process Technology
 Specially Designed for Switch Load, PWM Application, etc.
 ESD Protected 2KV HBM
 Lead free in compliance with EU RoHS 2011/65/EU directive.
 Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
 Case : DFN2020-8L Package
 Terminals : Solderable per MIL-STD-750, Method 2026
 Approx. Weight : 0.00032 ounces, 0.0093 grams
 Marking : 888
Maximum
Ratings
and
Thermal
Characteristics
o
(T_A=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current ^{(Note 4)}
Power Dissipation
T_a=25^oC
Derate above 25^oC
Operating Junction and Storage Temperature Range
Typical Thermal resistance
- Junction to Ambient ^{(Note 3)}
SYMBOL
V_DS
V_GS
I_D
I_DM
P_D
T_J,T_STG
R_θJA
LIMIT
-20
+8
-1.5
-6.0
1.25
10
-55~150
100
UNITS
V
V
A
A
W
mW/ ^oC
o_C
o_C/W
November 16,2015-REV.03
Page 1