PJQ2815 Datasheet, PDF (1/6 Pages) Pan Jit International Inc. – 20V P-Channel Enhancement Mode MOSFET

PPJQ2815
20V P-Channel Enhancement Mode MOSFET
Voltage
-20 V Current
-4.2A
Features
 RDS(ON) , VGS@-4.5V, ID@-4.2A<52mΩ
 RDS(ON) , VGS@-2.5V, ID@-3.3A<62mΩ
 RDS(ON) , VGS@-1.8V, ID@-2.2A<73mΩ
 Advanced Trench Process Technology
 Specially Designed for Switch Load, PWM Application, etc
 ESD Protected
 Lead free in compliance with EU RoHS 2011/65/EU directive
 Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
 Case: DFN2020-6L Package
 Terminals: Solderable per MIL-STD-750, Method 2026
 Approx. Weight: 0.00032 ounces, 0.0093 grams
 Marking: 815
DFN2020-6L
Maximum
Ratings
and
Thermal
Characteristics
o
(T_A=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
T_a=25^oC
Derate above 25^oC
Operating Junction and Storage Temperature Range
Typical Thermal resistance
- Junction to Ambient ^{(Note 3)}
SYMBOL
V_DS
V_GS
I_D
I_DM
P_D
T_J,T_STG
R_θJA
LIMIT
-20
+8
-4.2
-16.8
1.5
12
-55~150
83.3
UNITS
V
V
A
A
W
mW/ ^oC
o_C
o_C/W
November 16,2015-REV.01
Page 1