PJQ2800 Datasheet, PDF (1/6 Pages) Pan Jit International Inc. – 20V N-Channel Enhancement Mode MOSFET

PPJQ2800
20V N-Channel Enhancement Mode MOSFET
Voltage
20 V Current
5.2A
Features
 RDS(ON) , VGS@4.5V, ID@5.2A<32mΩ
 RDS(ON) , VGS@2.5V, ID@3.2A<45mΩ
 RDS(ON) , VGS@1.8V, ID@2.0A<65mΩ
 Advanced Trench Process Technology
 High density cell design for ultra low on-resistance
 ESD Protected
 Lead free in compliance with EU RoHS 2011/65/EU directive.
 Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
 Case: DFN2020-6L Package
 Terminals : Solderable per MIL-STD-750, Method 2026
 Approx. Weight: 0.00032 ounces, 0.0093 grams
 Marking: 800
DFN2020-6L
Maximum
Ratings
and
Thermal
Characteristics
o
(T_A=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
T_a=25^oC
Derate above 25^oC
Operating Junction and Storage Temperature Range
Typical Thermal resistance
- Junction to Ambient ^{(Note 3)}
SYMBOL
V_DS
V_GS
I_D
I_DM
P_D
T_J,T_STG
R_θJA
LIMIT
20
+8
5.2
20.8
1.45
11.6
-55~150
86
UNITS
V
V
A
A
W
mW/ ^oC
o_C
o_C/W
November 16,2015-REV.01
Page 1