PJQ2460 Datasheet, PDF (1/6 Pages) Pan Jit International Inc. – 60V N-Channel Enhancement Mode MOSFET

PPJQ2460
60V N-Channel Enhancement Mode MOSFET
Voltage
60 V Current
3.2A
Features
 RDS(ON) , VGS@10V, ID@3.2A<75mΩ
 RDS(ON) , VGS@4.5V, ID@2.0A<90mΩ
 Advanced Trench Process Technology
 High density cell design for ultra low on-resistance
 Lead free in comply with EU RoHS 2011/65/EU directives.
 Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
 Case: DFN2020B-6L Package
 Terminals: Solderable per MIL-STD-750, Method 2026
 Marking: 460
DFN2020B-6L
Maximum
Ratings
and
Thermal
Characteristics
o
(T_A=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
T_a=25^oC
Derate above 25^oC
Operating Junction and Storage Temperature Range
Typical Thermal Resistance
- Junction to Ambient, t<10s ^{(Note 3)}
SYMBOL
V_DS
V_GS
I_D
I_DM
P_D
T_J,T_STG
R_θJA
LIMIT
60
+20
3.2
12.8
2.0
16
-55~150
62.5
UNITS
V
V
A
A
W
mW/ ^oC
o_C
o_C/W
November 16,2015-REV.02
Page 1