PJQ1902 Datasheet, PDF (1/6 Pages) Pan Jit International Inc. – 30V N-Channel Enhancement Mode MOSFET – ESD Protected

PPJQ1902
30V N-Channel Enhancement Mode MOSFET – ESD Protected
Voltage
30 V Current 500mA
DFN3L
Features
 RDS(ON) , VGS@4.5V, ID@350mA<1.2Ω
 RDS(ON) , VGS@2.5V, ID@200mA<1.6Ω
 RDS(ON) , VGS@1.8V, ID@80mA<2.3Ω
 RDS(ON) , VGS@1.5V, ID@10mA<2.5Ω(typ.)
 Specially Designed for Switch Load, PWM Application, etc.
 ESD Protected 2KV HBM
 Lead free in compliance with EU RoHS 2011/65/EU
directive
 Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
 Case: DFN3L Package
 Terminals: Solderable per MIL-STD-750, Method 2026
 Approx. Weight: 0.00004 ounces, 0.0011 grams
 Marking: 2
Unit: inch(mm)
Maximum
Ratings
and
Thermal
Characteristics
o
(T_A=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
T_a=25^oC
Derate above 25^oC
Operating Junction and Storage Temperature Range
Typical Thermal resistance
- Junction to Ambient ^{(Note 3)}
SYMBOL
V_DS
V_GS
I_D
I_DM
P_D
T_J,T_STG
R_θJA
LIMIT
30
+10
500
1500
700
5.6
-55~150
175
UNITS
V
V
mA
mA
mW
mW/ ^oC
o_C
o_C/W
September 30,2015-REV.00
Page 1