PJQ1900 Datasheet, PDF (1/6 Pages) Pan Jit International Inc. – 20V N-Channel Enhancement Mode MOSFET

PPJQ1900
20V N-Channel Enhancement Mode MOSFET
Voltage
20 V Current
1.2 A
Features
 Low Voltage Drive (1.2V).
 Advanced Trench Process Technology
 Specially Designed for Switch Load, PWM Application, etc.
 ESD Protected
 Lead free in compliance with EU RoHS 2011/65/EU
directive.
 Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
 Case: DFN 3L Package
 Terminals: Solderable per MIL-STD-750, Method 2026
 Approx. Weight: 0.00004 ounces, 0.0011 grams
 Marking: 0
DFN 3L
Unit: inch(mm)
Maximum
Ratings
and
Thermal
Characteristics
o
(T_A=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current, tp<10us
Power Dissipation
T_A=25^oC
T_sp=25^oC ^{(Note 3)}
T_A=25^oC
Derate above 25^oC
Operating Junction and Storage Temperature Range
Typical Thermal resistance
- Junction to Ambient, t<10s ^{(Note 4)}
SYMBOL
V_DS
V_GS
I_D
I_DM
P_D
T_J,T_STG
R_θJA
LIMIT
20
+10
1.2
2.0
4.0
900
7.2
-55~150
139
UNITS
V
V
A
A
mW
mW/ ^oC
o_C
o_C/W
August 28,2015-REV.00
Page 1