PJP8N60 Datasheet, PDF (1/5 Pages) Pan Jit International Inc. – 600V N-Channel Enhancement Mode MOSFET

PJP8N60 / PJF8N60
600V N-Channel Enhancement Mode MOSFET
FEATURES
• 8A , 600V, R_DS(ON)=1.2Ω@V_GS=10V, I_D=4.0A
TO-220AB / ITO-220AB
TO-220AB
• Low ON Resistance
• Fast Switching
• Low Gate Charge
• Fully Characterized Avalanche Voltage and Current
• Specially Desigened for AC Adapter, Battery Charge and SMPS
• In compliance with EU RoHs 2002/95/EC Directives
3
1
2
GD
S
ITO-220AB
1
2
3
D
S
G
MECHANICAL DATA
• Case: TO-220AB / ITO-220AB Molded Plastic
• Terminals : Solderable per MIL-STD-750,Method 2026
ORDERING INFORMATION
INTERNAL SCHEMATIC DIAGRAM
Drain
TYPE
PJP8N60
PJF8N60
MARKING
P8N60
F8N60
PACKAGE
TO-220AB
ITO-220AB
PACKING
50PCS/TUBE
50PCS/TUBE
Gate
Source
Maximum RATINGS and Thermal Characteristics (T_A=25^OC unless otherwise noted )
PA RA ME TE R
Symbol PJP8N60 PJF8N60
Drain-Source Voltage
V _DS
600
Gate-Source Voltage
V _GS
+30
Continuous Drain Current
I_D
8
8
Pulsed Drain Current ¹⁾
Maximum Power Dissipation
Derating Factor
I_DM
T_A= 2 5 ^OC
P_D
32
125
1.0
32
45
0.39
Op e ra ti ng J uncti o n a nd S to ra g e Te mp e r a ture Ra ng e
Avalanche Energy with Single Pulse
I_AS=8.0A, VDD=50V, L=15.6mH
Junction-to-Case Thermal Resistance
T_J,T_STG
E _AS
R_θJC
-55 to +150
500
1
2.78
Junction-to Ambient Thermal Resistance
R_θJA
62.5
100
Note: 1. Maximum DC current limited by the package
Uni ts
V
V
A
A
W
O_C
mJ
O_{C /W}
O_{C /W}
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
May 10,2010-REV.01
PAGE . 1