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PJP840 Datasheet, PDF (1/5 Pages) Pan Jit International Inc. – 500V N-Channel Enhancement Mode MOSFET | |||
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PJP840 / PJF840
500V N-Channel Enhancement Mode MOSFET
FEATURES
⢠8A , 500V, RDS(ON)=0.9â¦@VGS=10V, ID=4A
TO-220AB / ITO-220AB
TO-220AB
⢠Low ON Resistance
⢠Fast Switching
⢠Low Gate Charge
⢠Fully Characterized Avalanche Voltage and Current
⢠Specially Desigened for AC Adapter, Battery Charge and SMPS
⢠In compliance with EU RoHs 2002/95/EC Directives
3
2S
1D
G
ITO-220AB
12
G
3
D
S
MECHANICAL DATA
⢠Case: TO-220AB / ITO-220AB Molded Plastic
⢠Terminals : Solderable per MIL-STD-750,Method 2026
ORDERING INFORMATION
INTERNAL SCHEMATIC DIAGRAM
Drain
TYPE
PJP840
PJF840
MARKING
P840
F840
PACKAGE
TO-220AB
ITO-220AB
PACKING
50PCS/TUBE
50PCS/TUBE
Gate
Source
Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted )
PA RA ME TE R
S ym b o l
Drain-Source Voltage
V DS
Gate-Source Voltage
V GS
Continuous Drain Current
ID
Pulsed Drain Current 1)
Maximum Power Dissipation
Derating Factor
IDM
TA= 2 5 OC
PD
Op e ra ti ng J uncti o n a nd S to ra g e Te mp e r a ture Ra ng e
Avalanche Energy with Single Pulse
IAS=8.0A, VDD=72V, L=14mH
Junction-to-Case Thermal Resistance
TJ,TSTG
E AS
RθJC
Junction-to Ambient Thermal Resistance
RθJA
Note: 1. Maximum DC current limited by the package
PJP840
PJF840
500
+30
8
8
32
32
125
45
1.0
0.36
-55 to +150
514
1.0
2.78
62.5
100
Uni ts
V
V
A
A
W
OC
mJ
OC /W
OC /W
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
November 24,2009-REV.00
PAGE . 1
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