PJP75N75_07 Datasheet, PDF (1/4 Pages) Pan Jit International Inc. – 75V N-Channel Enhancement Mode MOSFET

PJP75N75
75V N-Channel Enhancement Mode MOSFET
FEATURES
• R_DS(ON), V_GS@10V,I_DS@30A=11mΩ
• Advanced Trench Process Technology
• High Density Cell Design For Ultra Low On-Resistance
• Specially Designed for Converters and Power Motor Controls
• Fully Characterized Avalanche Voltage and Current
• In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
• Case: TO-220AB Molded Plastic
• Terminals : Solderable per MIL-STD-750,Method 2026
• Marking : P75N75
Drain
Gate
Source
Maximum RATINGS and Thermal Characteristics (T_A=25^OC unless otherwise noted )
PARAMETER
Symbol Limit
Drain-Source Voltage
V _DS
75
Gate-Source Voltage
V_GS
+20
Continuous Drain Current
I_D
75
Pulsed Drain Current ¹⁾
I_{D M}
Maximum Power Dissipation
T_A =25^OC
T_A =75^OC
P_D
Op e ra ti ng J unc ti o n a nd S to ra g e Te mp e ra ture Ra ng e
T_J,T_{S TG}
Avalanche Energy with Single Pulse
I_AS=47A, VDD=37.5V, L=0.3mH
E_AS
Junction-to-Case Thermal Resistance
R_{θJ C}
350
105
62.5
-55 to +150
660
1.2
Junction-to Ambient Thermal Resistance(PCB mounted)²
R_{θJ A}
62
Note: 1. Maximum DC current limited by the package
Uni ts
V
V
A
A
W
O_C
mJ
O_C/W
O_C/W
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
STAD-JUN.11.2007
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