PJP75N75 Datasheet, PDF (1/4 Pages) Pan Jit International Inc. – 75V N-Channel Enhancement Mode MOSFET

PJP75N75
75V N-Channel Enhancement Mode MOSFET
FEATURES
• R_DS(ON), V_GS@10V,I_DS@30A=12mΩ
• R_DS(ON), V_GS@4.5V,I_DS@30A=18mΩ
• Advanced Trench Process Technology
• High Density Cell Design For Ultra Low On-Resistance
• Specially Designed for Converters and Power Motor Controls
• Fully Characterized Avalanche Voltage and Current
• Pb free product : 99% Sn above can meet RoHS environment
substance directive request
MECHANICAL DATA
• Case: TO-220AB Molded Plastic
• Terminals : Solderable per MIL-STD-750,Method 2026
• Marking : P75N75
Drain
Gate
Source
PIN Assignment
1. Gate
2. Drain
3. Source
Maximum RATINGS and Thermal Characteristics (T_A=25^OC unless otherwise noted )
Drain-Source Voltage
PA RA ME TE R
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current ¹⁾
Maximum Power Dissipation
Op e ra ti ng J unc ti o n a nd S to ra g e Te m p e ra ture Ra ng e
Avalanche Energy with Single Pulse
ID=41A, VDD=25V, L=0.5mH
Junction-to-Case Thermal Resistance
T_A =25^OC
T_A =75^OC
Junction-to Ambient Thermal Resistance(PCB mounted)²
S ym b o l
V_DS
V_GS
I_D
I_{D M}
P_D
T_J,T_{S TG}
E_AS
R_{θJ C}
R_{θJ A}
Limit
75
+20
75
350
105
62.5
-55 to + 150
420
1.2
62
Note: 1. Maximum DC current limited by the package
Uni ts
V
V
A
A
W
O_C
mJ
O _{C /W}
O _{C /W}
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
STAD-JUN.27.2006
PAGE . 1