PJP6000 Datasheet, PDF (1/4 Pages) Pan Jit International Inc. – 60V N-Channel Enhancement Mode MOSFET

PJP6000
60V N-Channel Enhancement Mode MOSFET
FEATURES
• R_DS(ON), V_GS@10V,I_DS@30A=14mΩ
• Advanced Trench Process Technology
• High Density Cell Design For Ultra Low On-Resistance
• Specially Designed for Converters and Power Motor Controls
• Fully Characterized Avalanche Voltage and Current
• In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
• Case: TO-220AB Molded Plastic
• Terminals : Solderable per MIL-STD-750,Method 2026
• Marking : P6000
Drain
Gate
Source
Maximum RATINGS and Thermal Characteristics (T_A=25^OC unless otherwise noted )
PA RA ME TE R
S ym b o l
Limit
Drain-Source Voltage
V_DS
60
Gate-Source Voltage
V_GS
+20
Continuous Drain Current
I_D
60
Pulsed Drain Current ¹⁾
I_{D M}
Maximum Power Dissipation
T_A =25^OC
T_A =75^OC
P_D
Op e r a ti ng J unc ti o n a nd S to r a g e Te m p e r a tur e Ra ng e
T_J,T_{S TG}
Avalanche Energy with Single Pulse
I_AS=37A, VDD=30V, L=0.3mH
E_AS
Junction-to-Case Thermal Resistance
R_{θJ C}
210
90
53.5
-55 to +150
410
1.4
Junction-to Ambient Thermal Resistance(PCB mounted)²
R_{θJ A}
62
Uni ts
V
V
A
A
W
O_C
mJ
O _{C /W}
O _{C /W}
Note: 1. Maximum DC current limited by the package
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
STAD-JUN.11.2007
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