PJP4N60 Datasheet, PDF (1/5 Pages) Pan Jit International Inc. – 600V N-Channel Enhancement Mode MOSFET

PJP4N60 / PJF4N60
600V N-Channel Enhancement Mode MOSFET
FEATURES
• 4A , 600V, R_DS(ON)=2.4Ω@V_GS=10V, I_D=2.0A
TO-220AB / ITO-220AB
TO-220AB
• Low ON Resistance
• Fast Switching
• Low Gate Charge
• Fully Characterized Avalanche Voltage and Current
• Specially Desigened for AC Adapter, Battery Charge and SMPS
• In compliance with EU RoHs 2002/95/EC Directives
1
2
3
D
S
G
ITO-220AB
1
2
3
D
S
G
MECHANICAL DATA
• Case: TO-220AB / ITO-220AB Molded Plastic
• Terminals : Solderable per MIL-STD-750,Method 2026
INTERNAL SCHEMATIC DIAGRAM
ORDERING INFORMATION
TYPE
PJP4N60
PJF4N60
MARKING
P4N60
F4N60
PACKAGE
TO-220AB
ITO-220AB
PACKING
50PCS/TUBE
50PCS/TUBE
2 Drain
1
Gate
3 Source
Maximum RATINGS and Thermal Characteristics (T_A=25^OC unless otherwise noted )
PA RA ME TE R
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current ¹⁾
Maximum Power Dissipation
Derating Faotor
Symbol PJP4N60 PJF4N60
V _DS
600
V _GS
+30
I_D
4
4
I_DM
16
16
T_A= 2 5 ^OC
P_D
70
0.56
26
0.2
Op e ra ti ng J uncti o n a nd S to ra g e Te mp e r a ture Ra ng e
Avalanche Energy with Single Pulse
I_AS=4.4A, VDD=85V, L=30mH
Junction-to-Case Thermal Resistance
Junction-to Ambient Thermal Resistance(PCB mounted)²
Note : 1. Maximum DC current limited by the package
T_J,T_STG
E _AS
R_θJC
R_θJA
-55 to +150
330
1.75
4.8
62.5
100
Uni ts
V
V
A
A
W
O_C
mJ
O_{C /W}
O_{C /W}
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
March 31,2010-REV.00
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