PJP2N60 Datasheet, PDF (1/6 Pages) Pan Jit International Inc. – 600V N-Channel Enhancement Mode MOSFET

PJP2N60 / PJF2N60
600V N-Channel Enhancement Mode MOSFET
FEATURES
• 2A , 600V, R_DS(ON)=4.6Ω@V_GS=10V, I_D=1A
TO-220AB / ITO-220AB
TO-220AB
• Low ON Resistance
• Fast Switching
• Low Gate Charge
• Fully Characterized Avalanche Voltage and Current
• Specially Desigened for AC Adapter, Battery Charge and SMPS
• In compliance with EU RoHs 2002/95/EC Directives
3
1
2
S
D
G
ITO-220AB
1
2
G
3
D
S
MECHANICAL DATA
• Case: TO-220AB / ITO-220AB Molded Plastic
• Terminals : Solderable per MIL-STD-750,Method 2026
ORDERING INFORMATION
INTERNAL SCHEMATIC DIAGRAM
Drain
TYPE
PJP2N60
PJF2N60
MARKING
P2N60
F2N60
PACKAGE
TO-220AB
ITO-220AB
PACKING
50PCS/TUBE
50PCS/TUBE
Gate
Source
Maximum RATINGS and Thermal Characteristics (T_A=25^OC unless otherwise noted )
PA RA ME TE R
Symbol PJP2N60 PJF2N60
Drain-Source Voltage
V _DS
Gate-Source Voltage
V _GS
Continuous Drain Current
I_D
Pulsed Drain Current ¹⁾
Maximum Power Dissipation
Derating Factor
I_DM
T_A= 2 5 ^OC
P_D
Op e ra ti ng J uncti o n a nd S to ra g e Te mp e r a ture Ra ng e
Avalanche Energy with Single Pulse
I_AS=2.0A, VDD=50V, L=56mH
Junction-to-Case Thermal Resistance
T_J,T_STG
E _AS
R_θJC
Junction-to Ambient Thermal Resistance
R_θJA
600
+30
2
2
8
8
45
0.36
20
0.16
-55 to +150
120
2.78
6.25
62.5
100
Note : 1. Maximum DC current limited by the package
Uni ts
V
V
A
A
W
O_C
mJ
O_{C /W}
O_{C /W}
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
STAD-NOV.24.2009
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