PJP24N10 Datasheet, PDF (1/5 Pages) Pan Jit International Inc. – 100V N-Channel Enhancement Mode MOSFET

PJP24N10 / PJF24N10
100V N-Channel Enhancement Mode MOSFET
FEATURES
• R_DS(ON), V_GS@10V,I_DS@30A=24mΩ
• Low On Resistance
• Excellent Gate Charge x R_DS(ON) Product ( FOM )
• Fully Characterized Avalanche Voltage and Current
• Specially Designed for AC Adapter, High-Frequency Switch
and Synchronous Rectification
• Component are in compliance with EU RoHS 2002/95/EC
directives
MECHANICAL DATA
• Case: TO-220AB / ITO-220AB Molded Plastic
• Terminals : Solderable per MIL-STD-750,Method 2026
ORDERING INFORMATION
TYPE
MARKING
PJP24N10
P24N10
PJF24N10
F24N10
PACKAGE
TO-220AB
ITO-220AB
PACKING
50PCS/TUBE
50PCS/TUBE
TO-220AB / ITO-220AB
TO-220AB
ITO-220AB
3
2S
1D
G
1
2
3
D
S
G
INTERNAL SCHEMATIC DIAGRAM
Drain
Gate
Source
Maximum RATINGS and Thermal Characteristics (T_A=25^OC unless otherwise noted )
PA RA ME TE R
Symbol PJP24N10 PJF24N10
Drain-Source Voltage
V _DS
Gate-Source Voltage
V _GS
Continuous Drain Current
I_D
Pulsed Drain Current ¹⁾
Maximum Power Dissipation
Derating Factor
I_DM
T_A= 2 5 ^OC
P_D
Op e ra ti ng J uncti o n a nd S to ra g e Te mp e r a ture Ra ng e
Avalanche Energy with Single Pulse
I_AS=17A, VDD=80V, L=4.7mΗ
Junction-to-Case Thermal Resistance
T_J,T_STG
E _AS
R_θJC
Junction-to Ambient Thermal Resistance
R_θJA
Note: 1. Maximum DC current limited by the package
100
+20
42
42
160
160
89
0.71
32
0.42
-55 to +150
680
1.4
3.8
62.5
100
Uni ts
V
V
A
A
W
O_C
mJ
O_{C /W}
O_{C /W}
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
June 03, 2010-REV.01
PAGE . 1