PJP1N80 Datasheet, PDF (1/6 Pages) Pan Jit International Inc. – 800V N-Channel Enhancement Mode MOSFET

PJP1N80 / PJU1N80
800V N-Channel Enhancement Mode MOSFET
FEATURES
• 1A, 800V, R_DS(ON)=16Ω@V_GS=10V, I_D=0.5A
TO-220AB/TO-251
TO-220AB
• Low ON Resistance
• Fast Switching
• Low Gate Charge
• Fully Characterized Avalanche Voltage and Current
• Specially Desigened for AC Adapter, Battery Charge and SMPS
• In compliance with EU RoHs 2002/95/EC Directives
1¹
2²
3₃
D
S
G
TO- 2 5 1
1
G
2₂
D
33
S
MECHANICAL DATA
• Case: TO-220AB / TO-251 Molded Plastic
• Terminals : Solderable per MIL-STD-750,Method 2026
INTERNAL SCHEMATIC DIAGRAM
Drain
ORDERING INFORMATION
TYPE
PJP1N80
PJU1N80
MARKING
P1N80
U1N80
PACKAGE
TO-220AB
TO-251
PACKING
50PCS/TUBE
80PCS/TUBE
Gate
Source
Maximum RATINGS and Thermal Characteristics (T_A=25^OC unless otherwise noted )
PA RA ME TE R
S ym b o l
Drain-Source Voltage
V _DS
Gate-Source Voltage
V _GS
Continuous Drain Current
I_D
Pulsed Drain Current ¹⁾
Maximum Power Dissipation
Derating factor
I_DM
T_A= 2 5 ^OC
P_D
Op e ra ti ng J uncti o n a nd S to ra g e Te mp e r a ture Ra ng e
Avalanche Energy with Single Pulse
I_AS=1.4A, VDD=50V, L=10mH
Junction-to-Case Thermal Resistance
T_J,T_STG
E _AS
R_θJC
Junction-to Ambient Thermal Resistance
R_θJA
Note: 1. Maximum DC current limited by the package
PJP1N80 PJU1N80
800
+30
1
1
4
4
45
0.36
31
0.25
-55 to +150
9.8
2.78
4
62.5
100
Uni ts
V
V
A
A
W
O_C
mJ
O_{C /W}
O_{C /W}
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
STAD-NOV.24.2009
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