PJP13N50 Datasheet, PDF (1/5 Pages) Pan Jit International Inc. – 500V N-Channel Enhancement Mode MOSFET

PJP13N50 / PJF13N50
500V N-Channel Enhancement Mode MOSFET
FEATURES
• 13A , 500V, R_DS(ON)=0.52Ω@V_GS=10V, I_D=6.5A
TO-220AB / ITO-220AB
TO-220AB
• Low ON Resistance
• Fast Switching
• Low Gate Charge
• Fully Characterized Avalanche Voltage and Current
• Specially Desigened for AC Adapter, Battery Charge and SMPS
• In compliance with EU RoHs 2002/95/EC Directives
3
2S
1D
G
ITO-220AB
12
G
3
D
S
MECHANICAL DATA
• Case: TO-220AB / ITO-220AB Molded Plastic
• Terminals : Solderable per MIL-STD-750,Method 2026
ORDERING INFORMATION
INTERNAL SCHEMATIC DIAGRAM
Drain
TYPE
PJP13N50
PJF13N50
MARKING
P13N50
F13N50
PACKAGE
TO-220AB
ITO-220AB
PACKING
50PCS/TUBE
50PCS/TUBE
Gate
Source
Maximum RATINGS and Thermal Characteristics (T_A=25^OC unless otherwise noted )
PA RA ME TE R
Symbol PJP13N50 PJF13N50
Drain-Source Voltage
V _DS
Gate-Source Voltage
V _GS
Continuous Drain Current
I_D
Pulsed Drain Current ¹⁾
Maximum Power Dissipation
Derating Factor
I_DM
T_A= 2 5 ^OC
P_D
Op e ra ti ng J uncti o n a nd S to ra g e Te mp e r a ture Ra ng e
Avalanche Energy with Single Pulse
I_AS=12.5A, VDD=50V, L=10mH
Junction-to-Case Thermal Resistance
T_J,T_STG
E _AS
R_θJC
Junction-to Ambient Thermal Resistance
R_θJA
500
+30
13
13
52
52
175
52
1.4
0.42
-55 to +150
780
0.7
2.4
62.5
100
Note: 1. Maximum DC current limited by the package
Uni ts
V
V
A
A
W
O_C
mJ
O_{C /W}
O_{C /W}
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Jan 27,2010-REV.00
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