PJP12N65 Datasheet, PDF (1/6 Pages) Pan Jit International Inc. – 650V N-Channel Enhancement Mode MOSFET

PJP12N65 / PJF12N65
650V N-Channel Enhancement Mode MOSFET
FEATURES
• 12A , 650V, R_DS(ON)=0.8Ω@V_GS=10V, I_D=6.0A
TO-220AB / ITO-220AB
TO-220AB
• Low ON Resistance
• Fast Switching
• Low Gate Charge
• Fully Characterized Avalanche Voltage and Current
• Specially Desigened for AC Adapter, Battery Charge and SMPS
• In compliance with EU RoHs 2002/95/EC Directives
1
2
3
D
S
G
ITO-220AB
1
2
3
D
S
G
MECHANICAL DATA
• Case: TO-220AB / ITO-220AB Molded Plastic
• Terminals : Solderable per MIL-STD-750,Method 2026
INTERNAL SCHEMATIC DIAGRAM
ORDERING INFORMATION
TYPE
PJP12N65
PJF12N65
MARKING
P12N65
F12N65
PACKAGE
TO-220AB
ITO-220AB
PACKING
50PCS/TUBE
50PCS/TUBE
2 Drain
1
Gate
3 Source
Maximum RATINGS and Thermal Characteristics (T_A=25^OC unless otherwise noted )
PA RA ME TE R
Symbol PJP12N65 PJF12N65
Drain-Source Voltage
V _DS
650
Gate-Source Voltage
V _GS
+30
Continuous Drain Current
I_D
12
12
Pulsed Drain Current ¹⁾
Maximum Power Dissipation
Derating Factor
I_DM
T_A= 2 5 ^OC
P_D
48
175
1.4
48
52
0.42
Op e ra ti ng J uncti o n a nd S to ra g e Te mp e r a ture Ra ng e
Avalanche Energy with Single Pulse
I_AS=12A, VDD=90V, L=12mΗ
Junction-to-Case Thermal Resistance
T_J,T_STG
E _AS
R_θJC
-55 to +150
990
0.7
2.4
Junction-to Ambient Thermal Resistance
R_θJA
62.5
100
Note : 1. Maximum DC current limited by the package
Uni ts
V
V
A
A
W
O_C
mJ
O_{C /W}
O_{C /W}
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
STAD-DEC.25.2009
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