PJP10NA65 Datasheet, PDF (1/8 Pages) Pan Jit International Inc. – 650V N-Channel MOSFET

PPJP10NA65 / PJF10NA65
650V N-Channel MOSFET
Voltage
650 V Current
10 A
Features
 R_DS(ON), V_GS@10V,I_D@5A<1Ω
 High switching speed
 Improved dv/dt capability
 Low Gate Charge
 Low reverse transfer capacitance
 Lead free in compliance with EU RoHS 2011/65/EU directive.
 Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
 Case : TO-220AB, ITO-220AB-F Package
 Terminals : Solderable per MIL-STD-750, Method 2026
 TO-220AB Approx. Weight : 0.067 ounces, 1.89 grams
 ITO-220AB-F Approx. Weight : 0.068 ounces, 2 grams
ITO-220AB-F
TO-220AB
Maximum
Ratings
and
Thermal
Characteristics
o
(T_A=25 C
unless
otherwise
noted)
PARAMETER
SYMBOL
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current
I_D
Pulsed Drain Current
I_DM
Single Pulse Avalanche Energy ^{(Note 1)}
E_AS
T_C=25^oC
Power Dissipation
Derate above 25^oC
P_D
Operating Junction and
Storage Temperature Range
T_J,T_STG
Typical Thermal resistance
- Junction to Case
R_θJC
- Junction to Ambient
R_θJA
 Limited only By Maximum Junction Temperature
TO-220AB
ITO-220AB-F
650
+30
10
40
608
156
50
1.25
0.4
-55~150
UNITS
V
V
A
A
mJ
W
W/ ^oC
o_C
0.8
2.5
o_C/W
62.5
120
March 10,2014-REV.00
Page 1