PJP10N65 Datasheet, PDF (1/6 Pages) Pan Jit International Inc. – 650V N-Channel Enhancement Mode MOSFET

PJP10N65 / PJF10N65
650V N-Channel Enhancement Mode MOSFET
FEATURES
• 10A , 650V, R_DS(ON)=1.0Ω@V_GS=10V, I_D=5.0A
TO-220AB / ITO-220AB
TO-220AB
• Low ON Resistance
• Fast Switching
• Low Gate Charge
• Fully Characterized Avalanche Voltage and Current
• Specially Desigened for AC Adapter, Battery Charge and SMPS
• In compliance with EU RoHs 2002/95/EC Directives
3
2
S
1D
G
ITO-220AB
1
2
3
D
S
G
MECHANICAL DATA
• Case: TO-220AB / ITO-220AB Molded Plastic
• Terminals : Solderable per MIL-STD-750,Method 2026
INTERNAL SCHEMATIC DIAGRAM
2 Drain
ORDERING INFORMATION
TYPE
PJP10N65
MARKING
P10N65
PJF10N65
F10N65
PACKAGE
TO-220AB
ITO-220AB
PACKING
50PCS/TUBE
50PCS/TUBE
1
Gate
3 Source
Maximum RATINGS and Thermal Characteristics (T_A=25^OC unless otherwise noted )
PARAMETER
Symbol PJP10N65 PJF10N65
Drain-Source Voltage
V_DS
650
Gate-Source Voltage
V _GS
+30
Continuous Drain Current
I_D
10
10
Pulsed Drain Current ¹⁾
Maximum Power Dissipation
Derating Factor
I_DM
40
40
T_A= 2 5 ^OC
P_D
156
1.25
50
0.4
Op e ra ti ng Junc ti o n a nd S to r a g e Te mp e ra tur e Ra ng e
Avalanche Energy with Single Pulse
I_AS=10A, VDD=90V, L=13mΗ
Junction-to-Case Thermal Resistance
T_J,T_STG
E _AS
R_θJC
-55 to +150
750
0.8
2.5
Junction-to Ambient Thermal Resistance
Note : 1. Maximum DC current limited by the package
R_θJA
62.5
100
Uni ts
V
V
A
A
W
O_C
mJ
O_{C /W}
O_{C /W}
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
STAD-DEC.25.2009
PAGE . 1