PJN1NA50 Datasheet, PDF (1/8 Pages) Pan Jit International Inc. – 500V N-Channel MOSFET

PPJN1NA50 / PJW1NA50 / PJU1NA50 / PJD1NA50
500V N-Channel MOSFET
Voltage
500 V Current
1A
Features
 RDS(ON), VGS@10V,ID@0.5A<9Ω
 High switching speed
 Improved dv/dt capability
 Low Gate Charge
 Low reverse transfer capacitance
 Lead free in compliance with EU RoHS 2011/65/EU directive.
 Green molding compound as per IEC61249 Std. (Halogen Free)
TO-92
SOT-223
TO-252
TO-251AB
Mechanical Data
 Case : TO-251AB, TO-252, SOT-223, TO-92 Package
 Terminals : Solderable per MIL-STD-750, Method 2026
 TO-251AB Approx. Weight : 0.0104 ounces, 0.297grams
 TO-252 Approx. Weight : 0.0104 ounces, 0.297grams
 SOT-223 Approx. Weight : 0.043 ounces, 0.123grams
 TO-92 Approx. Weight : 0.007 ounces, 0.196grams
Maximum
Ratings
and
Thermal
Characteristics
o
(T_A=25 C
unless
otherwise
noted)
PARAMETER
SYMBOL TO-251AB TO-252 SOT-223 TO-92
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulse Avalanche Energy ^{(Note 1)}
Power Dissipation
T_C=25^oC
Derate above 25^oC
Operating Junction and
Storage Temperature Range
Typical Thermal resistance
- Junction to Case
- Junction to Ambient
V_DS
V_GS
I_D
I_DM
E_AS
P_D
T_J,T_STG
R_θJC
R_θJA
500
+30
1
0.3
4
1.2
42
25
3.3
3
0.2
0.026
0.024
-55~150
5
110
-
37.9 ^{(Note 4)}
-
140
 Limited only By Maximum Junction Temperature
UNITS
V
V
A
A
mJ
W
W/ ^oC
o_C
o_C/W
August 07,2014-REV.01
Page 1