PJN1N60D Datasheet, PDF (1/6 Pages) Pan Jit International Inc. – 600V N-Channel Enhancement Mode MOSFET

PJN1N60D
600V N-Channel Enhancement Mode MOSFET
FEATURES
• 0.5A, 600V, R_DS(ON)=15Ω@V_GS=10V, I_D=0.5A
TO-92
• Low ON Resistance
• Fast Switching
• Low Gate Charge
• Fully Characterized Avalanche Voltage and Current
• Specially Desigened for AC Adapter, Battery Charge and SMPS
• In compliance with EU RoHs 2002/95/EC Directives
MECHANICAL DATA
• Case: TO-92 Molded Plastic
• Terminals : Solderable per MIL-STD-750,Method 2026
3
1
G
2
D
S
INTERNAL SCHEMATIC DIAGRAM
2 Drain
ORDERING INFORMATION
TYPE
PJN1N60D
MARKING
1N60D
PACKAGE
TO-92
PACKING
2KPCS/AMMOPAK
1
Gate
3 Source
Maximum RATINGS and Thermal Characteristics (T_A=25^OC unless otherwise noted )
PARAMETER
Symbol
PJN1N60D
Drain-Source Voltage
V_DS
600
Gate-Source Voltage
V _GS
+30
Continuous Drain Current
I_D
0.5
Pulsed Drain Current ¹⁾
I_DM
Maximum Power Dissipation
Maximum Power Dissipation
Derating factor
T_A=2 5 ^OC
T_L=2 5 ^OC
P_D
Op e ra ti ng J unc ti o n a nd S to ra g e Te mp e ra ture Ra ng e
Avalanche Energy with Single Pulse
I_AS=1.6A, VDD=50V, L=77mH
Junction-to-Lead Thermal Resistance ²⁾
T _J, T_{S TG}
E_AS
R_θJL
2.0
0.9
3.1
0.02
-55 to +150
106
40
Junction-to Ambient Thermal Resistance
Note : 1. Maximum DC current limited by the package
2. Reference point of the R_θJL is the drain lead
R_θJA
140
Uni ts
V
V
A
A
W
O_C
mJ
O_{C /W}
O_{C /W}
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
STAD-DEC.25.2009
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