PJL9812 Datasheet, PDF (1/6 Pages) Pan Jit International Inc. – 30V Dual N-Channel Enhancement Mode MOSFET

PPJL9812
30V Dual N-Channel Enhancement Mode MOSFET
Voltage
30 V Current
6A
SOP-8
Features
 RDS(ON) , VGS@10V, ID@6A<35mΩ
 RDS(ON) , VGS@4.5V, ID@4A<40mΩ
 RDS(ON) , VGS@2.5V, ID@2A<54mΩ
 Advanced Trench Process Technology
 ESD Protected 2KV HBM
 High density cell design for ultra low on-resistance
 Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
 Case: SOP-8 package
 Terminals: Solderable per MIL-STD-750, Method 2026
 Approx. Weight: 0.0029 ounces, 0.083 grams
 Marking: L9812
Maximum
Ratings
and
Thermal
Characteristics
o
(T_A=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current ^{(Note 1)}
Power Dissipation
T_A=25^oC
T_A=70^oC
T_A=25^oC
T_A=70^oC
Operating Junction and Storage Temperature Range
Typical Thermal resistance
- Junction to Ambient, t≦10s ^{(Note 5)}
SYMBOL
V_DS
V_GS
I_D
I_DM
P_D
T_J,T_STG
R_θJA
LIMIT
30
+12
6
4.8
24
2
1.3
-55~150
62.5
UNITS
V
V
A
A
W
o_C
o_C/W
July 27,2015-REV.00
Page 1