PJL9801 Datasheet, PDF (1/6 Pages) Pan Jit International Inc. – 30V P-Channel Enhancement Mode MOSFET

PPJL9801
30V P-Channel Enhancement Mode MOSFET
Voltage
-30 V Current
-5A
Features
 RDS(ON) , VGS@-10V, ID@-5.0A<54mΩ
 RDS(ON) , VGS@-4.5V, ID@-3.5A<61mΩ
 RDS(ON) , VGS@-2.5V, ID@-2.5A<82mΩ
 Advanced Trench Process Technology
 High density cell design for ultra low on-resistance
 Lead free in compliance with EU RoHS 2011/65/EU
directive
 Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
 Case: SOP-8 Package
 Terminals: Solderable per MIL-STD-750, Method 2026
 Approx. Weight: 0.0029 ounces, 0.083 grams
 Marking: L9801
SOP-8
Unit: inch(mm)
Maximum
Ratings
and
Thermal
Characteristics
o
(T_A=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
T_a=25^oC
Derate above 25^oC
Operating Junction and Storage Temperature Range
Typical Thermal resistance
- Junction to Ambient ^{(Note 3)}
SYMBOL
V_DS
V_GS
I_D
I_DM
P_D
T_J,T_STG
R_θJA
LIMIT
-30
+12
5
20
2
16
-55~150
62.5
UNITS
V
V
A
A
W
mW/ ^oC
o_C
o_C/W
December 11,2014-REV.00
Page 1