PJK8806 Datasheet, PDF (1/6 Pages) Pan Jit International Inc. – 20V N-Channel Enhancement Mode MOSFET . ESD Protected

PPJX8806
20V N-Channel Enhancement Mode MOSFET – ESD Protected
Voltage
20 V
Current
800mA
SOT-563
Features
 R_DS(ON), V_GS@4.5V,I_DS@500mA=0.4Ω
 R_DS(ON), V_GS@2.5V,I_DS@300mA=0.7Ω
 R_DS(ON), V_GS@1.8V,I_DS@100mA=1.2Ω(typ)
 Advanced Trench Process Technology
 Specially Designed for Load Switch or PWM application.
 ESD Protected
 Lead free in comply with EU RoHS 2011/65/EU directives.
 Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
 Case: SOT-563 Package
 Terminals : Solderable per MIL-STD-750, Method 2026
 Approx. Weight: 0.00009 ounces, 0.0026 grams
 Marking: X06
Unit : inch(mm)
Maximum Ratings and Thermal Characteristics (T_A=25^oC unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
T_A=25^oC
Derate above 25^oC
Operating Junction and Storage Temperature Range
Thermal resistance
- Junction to Ambient ^{(Note 3)}
SYMBOL
V_DS
V_GS
I_D
I_DM
PD
T_J,T_STG
R_θJA
LIMIT
20
+12
800
3000
350
2.8
-55~150
357
UNITS
V
V
mA
mA
mW
mW/ ^oC
o_C
o_C/W
April 19,2013-REV.00
Page 1