PJF4NA65A Datasheet, PDF (1/7 Pages) Pan Jit International Inc. – 650V N-Channel MOSFET

PPJF4NA65A
650V N-Channel MOSFET
Voltage
650 V Current
4A
Features
 RDS(ON), VGS@10V,ID@2A<2.7Ω
 High switching speed
 Improved dv/dt capability
 Low Gate Charge
 Low reverse transfer capacitance
 Lead free in compliance with EU RoHS 2011/65/EU directive.
 Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
 Case :ITO-220AB-F Package
 Terminals : Solderable per MIL-STD-750, Method 2026
 Approx. Weight : 0.068 ounces, 2 grams
ITO-220AB-F
Maximum
Ratings
and
Thermal
Characteristics
o
(T_A=25 C
unless
otherwise
noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulse Avalanche Energy ^{(Note 1)}
Power Dissipation
T_C=25^oC
Derate above 25^oC
Operating Junction and
Storage Temperature Range
Typical Thermal resistance
- Junction to Case
- Junction to Ambient
V_DS
V_GS
I_D
I_DM
E_AS
P_D
T_J,T_STG
R_θJC
R_θJA
 Limited only By Maximum Junction Temperature
ITO-220AB-F
650
+30
4
16
202
33
0.26
-55~150
3.79
120
UNITS
V
V
A
A
mJ
W
W/ ^oC
o_C
o_C/W
August 19,2015-REV.00
Page 1