PJF2N70 Datasheet, PDF (1/6 Pages) Pan Jit International Inc. – 700V N-Channel Enhancement Mode MOSFET

PJF2N70 / PJU2N70
700V N-Channel Enhancement Mode MOSFET
FEATURES
• 700V, R_DS(ON)=5.5Ω@V_GS=10V, I_D=2A
• Low ON Resistance
• Fast Switching
• Low Gate Charge
• Fully Characterized Avalanche Voltage and Current
• Specially Desigened for AC Adapter, Battery Charge and SMPS
• In compliance with EU RoHs 2002/95/EC Directives
ITO-220AB/TO-251
ITO-220AB
1_G²_DS
TO- 2 5 1
GD2_S3
MECHANICAL DATA
• Case: TO-220AB / TO-251 Molded Plastic
• Terminals : Solderable per MIL-STD-750,Method 2026
ORDERING INFORMATION
TYPE
MARKING
PJF2N70
F2N70
PJU2N70
U2N70
PACKAGE
ITO-220AB
TO-251
PACKING
50PCS/TUBE
80PCS/TUBE
INTERNAL SCHEMATIC DIAGRAM
Drain
Gate
Source
Maximum RATINGS and Thermal Characteristics (T_A=25^OC unless otherwise noted )
PARAMETER
Symbol PJF2N70 PJU2N70
Drain-Source Voltage
V_DS
700
Gate-Source Voltage
V _GS
+30
Continuous Drain Current
I_D
2
2
Pulsed Drain Current ¹⁾
Maximum Power Dissipation
Derating Factor
I_DM
T_A= 2 5 ^OC
P_D
8
20
0.16
8
31
0.25
Op e ra ti ng J unc ti o n a nd S to ra g e Te mp e ra ture Ra ng e
Avalanche Energy with Single Pulse
I_AS=2A, VDD=50V, L=45mΗ
Junction-to-Case Thermal Resistance
T_J,T_STG
E_AS
R_θJC
-55 to +150
140
6.25
4
Junction-to Ambient Thermal Resistance
R_θJA
62.5
100
Uni ts
V
V
A
A
W
O_C
mJ
O_{C /W}
O_{C /W}
Note : 1. Maximum DC current limited by the package
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
STAD-NOV.24.2009
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