PJESDZ6V8-2G Datasheet, PDF (1/3 Pages) Pan Jit International Inc. – E.S.D. Dual Protection Diode Array

PJESDZ6V8-2G
E.S.D. Dual Protection Diode Array
This Dual Unidirectional ESD Protector Array family have been designed to protect
sensitive equipment against ESD in high speed transmission buses, operating at
5V. This dual array offers an integrated solution to protect up to
2 data lines in a unidirectional mode or, 1 data line in a bi-directional mode, in
application where the board space is a premium, in our SOT523 package
version.
SPECIFICATION FEATURES
IEC61000-4-2 ESD 15kV air, 8kV Contact Compliance
Low Leakage Current, Maximum of 0.5µA at rated voltage
Maximum Capacitance of 10pF per device at 0Vdc 1MHz
Peak Power Dissipation of 20W 8/20µs Waveform
Pin to pin compatible with standard SOT523
Lead Free Package 100% Tin Plating, Matte finish
Low profile, Max height of 0.55mm
APPLICATIONS
Mobile Phones
Digital Cameras
Notebooks PC's
PANJIT SOT523
3
1
2
3
1
2
MAXIMUM RATINGS (Per Device)
Rating
Peak Pulse Power (8/20µs Waveform)
Peak Pulse Current (8/20µs Waveform)
ESD Voltage (HBM Per MIL STD883C - Method 3015-6)
Operating Temperature Range
Storage Temperature Range
Symbol
P _PP
I _PPM
V _ESD
TJ
T_stg
Value
20
2
20
-55 to +125
-55 to +150
Units
W
A
kV
°C
°C
ELECTRICAL CHARACTERISTICS (Per Device) Tj = 25°C
Parameter
Symbol
Conditions
Reverse Stand-Off Voltage
V _WRM
Reverse Breakdown Voltage
V_BR
I _BR =1mA
Reverse Leakage Current
I_R
V_R = 5V
Clamping Voltage (8/20µs)
V_c
I _pp = 2A
Off State Junction Capacitance*
Cj
0 Vdc Bias f = 1MHz
between pin 1, 2 to 3 (Gnd)
* Capacitance between pins 1 and 2 is half of the value, in a bi-directional configuration.
Min Typical Max
5.0
6.2
7.2
0.5
10
9
10
Units
V
V
µA
V
pF
12/9/2008
Page 1
www.panjit.com