PJESDA5V6-5G Datasheet, PDF (1/3 Pages) Pan Jit International Inc. – QUAD ARRAY FOR ESD PROTECTION

PJESDA5V6-5G SERIES
QUAD ARRAY FOR ESD PROTECTION
FEATURES
• Low Leakage < 1A@VRWM
• Breakdown Voltage : 5.6Volt-6.7Volt@1mA
• ESD Protection Meeting IEC61000-4-2-Level 4
• In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
Case : SOT-563, Plastic
Terminals : Solderable per MIL-STD-750, Method 2026
Approx. Weight : 0.003 gram
SOT-563
MAXIMUM RATINGS (TA=25^oC unless otherwise noted)
Parameter
Peak Power D i ssi pati on (8x20s@TA=25^oC )(Note 1)
Steady State Power-1Diode (Note 2)
Thermal Resi stance Juncti on to Ambi ent Above 25^oC,D erate
L e a d S o ld e r Te m p e ra t ure ( 1 0 s e c o nd s d ura t i o n)
O p e r a t i ng J unc t i o n a nd S t o ra g e Te m p e ra t ure R a ng e
Symbol
P PK
PD
RJA
TL
TJ,TSTG
Limits
40
300
370
2.7
260
-55 to +150
Unit
W
mW
o_C/W
mW/^oC
o_C
o_C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional
operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Condtions may affect device reliability.
ELECTRICAL CHARACTERISTICS (TA=25^oC)
Part Number
PJESDA5V6-5G
PJESDA6V2-5G
PJESDA6V8-5G
Breakdown Voltage
VBR@1mA (Volts)
Min
Nom
Max
V
V
V
5.32
5.6
5.88
5.89
6.2
6.51
6.37
6.7
7.04
Leakage Current
IRM@V RM
V RWM
V
I RWM
A
3.0
1
4.3
1
5.0
1
VC Max@I PP
VC
I PP
V
A
10
5.0
11
4.5
12
4.0
Ma x Capacitance
@0V Bias
(1MHz)
pF
45
40
35
Marking
SB
SC
SD
1.Non-repetitive current per Figure 1.
2.Only 1 diode under power. For all 4 diodes under power, P D will be 25%. Mounted on FR-4 board with min pad
REV.0.1-JUN.11.2009
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