PJE8402 Datasheet, PDF (1/6 Pages) Pan Jit International Inc. – 20V N-Channel Enhancement Mode MOSFET – ESD Protected

PPJE8402
20V N-Channel Enhancement Mode MOSFET – ESD Protected
Voltage
20 V
Current
0.7A
SOT-523
Features
 RDS(ON) , VGS@4,5V, ID@0.7A<150mΩ
 RDS(ON) , VGS@2.5V, ID@0.5A<220mΩ
 RDS(ON) , VGS@1.8V, ID@0.2A<400mΩ
 Advanced Trench Process Technology
 Specially Designed for Switch Load, PWM Application, etc.
 ESD Protected 2KV HBM
 Lead free in compliance with EU RoHS 2011/65/EU directive.
 Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
 Case : SOT-523 Package
 Terminals : Solderable per MIL-STD-750, Method 2026
 Approx. Weight : 0.00007 ounces, 0.002 grams
 Marking : E02
Unit : inch(mm)
Maximum
Ratings
and
Thermal
Characteristics
o
(T_A=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
T_a=25^oC
Derate above 25^oC
Operating Junction and Storage Temperature Range
Typical Thermal resistance
- Junction to Ambient ^{(Note 3)}
SYMBOL
V_DS
V_GS
I_D
I_DM
P_D
T_J,T_STG
R_θJA
LIMIT
20
+8
0.7
2.8
300
2.4
-55~150
417
UNITS
V
V
A
A
mW
mW/ ^oC
o_C
o_C/W
January 22,2015-REV.01
Page 1