PJD50N10AL Datasheet, PDF (1/8 Pages) Pan Jit International Inc. – 100V N-Channel Enhancement Mode MOSFET

PPJD50N10AL
100V N-Channel Enhancement Mode MOSFET
Voltage
100 V Current
42 A
Features
 RDS(ON) , VGS@10V, ID@20A<25mΩ
 RDS(ON) , VGS@4.5V, ID@15A<28.5mΩ
 Advanced Trench Process Technology
 High density cell design for ultra low on-resistance
 Lead free in compliance with EU RoHS 2011/65/EU
directive.
 Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
TO-252
 Case : TO-252 Package
 Terminals : Solderable per MIL-STD-750, Method 2026
 Approx. Weight : 0.0104 ounces, 0.297grams
Maximum
Ratings
and
Thermal
Characteristics
o
(T_A=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
T_C=25^oC
T_C=100^oC
Pulsed Drain Current ^{(Note 1)}
T_C=25^oC
Power Dissipation
T_C=25^oC
T_C=100^oC
Continuous Drain Current
T_A=25^oC
T_A=70^oC
Power Dissipation
T_A=25^oC
Power Dissipation
T_A=70^oC
Single Pulse Avalanche Energy ^{(Note 6)}
Operating Junction and Storage Temperature Range
Typical Thermal Resistance^{(Note 4,5)}
Junction to Case
Junction to Ambient
 Limited only By Maximum Junction Temperature
SYMBOL
V_DS
V_GS
I_D
I_DM
PD
I_D
PD
E_AS
T_J,T_STG
R_θJC
R_θJA
LIMIT
100
+20
42
26
150
83
33
6.3
5.1
2.0
1.3
63.4
-55~150
1.5
62.5
UNITS
V
V
A
W
A
A
W
mJ
o_C
o_C/W
July 9,2015-REV.00
Page 1