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PJD20N06A Datasheet, PDF (1/8 Pages) Pan Jit International Inc. – 60V N-Channel Enhancement Mode MOSFET
PPJD20N06A
60V N-Channel Enhancement Mode MOSFET
Voltage
60 V
Current
20 A
Features
 RDS(ON), VGS@10V,ID@10A<42mΩ
 RDS(ON), VGS@4.5V,ID@5A<52mΩ
 High switching speed
 Improved dv/dt capability
 Low reverse transfer capacitance
 Lead free in compliance with EU RoHS 2011/65/EU
directive.
 Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
 Case : TO-252 Package
 Terminals : Solderable per MIL-STD-750, Method 2026
 Approx. Weight : 0.0104 ounces, 0.297grams
TO-252
Maximum
Ratings
and
Thermal
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
TC=25oC
TC=100oC
Pulsed Drain Current(Note 1)
TC=25oC
Power Dissipation
TC=25oC
TC=100oC
Continuous Drain Current
TA=25oC
TA=70oC
Power Dissipation
TA=25oC
Power Dissipation
TA=70oC
Single Pulse Avalanche Energy (Note 6)
Operating Junction and Storage Temperature Range
Typical Thermal resistance(Note 4,5) Junction to Case
Junction to Ambient
 Limited only By Maximum Junction Temperature
SYMBOL
VDS
VGS
ID
IDM
PD
ID
PD
EAS
TJ,TSTG
RθJC
RθJA
LIMIT
60
+20
20
12
80
31
12
5
4
2.0
1.3
20
-55~150
4.0
62.5
UNITS
V
V
A
W
A
A
W
mJ
oC
oC/W
July 9,2015-REV.00
Page 1