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| PJD14P10A Datasheet, PDF (1/8 Pages) Pan Jit International Inc. – 100V P-Channel Enhancement Mode MOSFET | |||
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PPJD14P10A
100V P-Channel Enhancement Mode MOSFET
Voltage -100 V Current
-14 A
Features
ï¬ RDS(ON), VGS@-10V,ID@-7A<140mΩ
ï¬ RDS(ON), VGS@-4.5V,ID@-3A<170mΩ
ï¬ High switching speed
ï¬ Improved dv/dt capability
ï¬ Low Gate Charge
ï¬ Low reverse transfer capacitance
ï¬ Lead free in compliance with EU RoHS 2011/65/EU directive.
ï¬ Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
ï¬ Case:TO-252 Package
ï¬ Terminals: Solderable per MIL-STD-750, Method 2026
ï¬ Approx. Weight: 0.0104 ounces, 0.297grams
TO-252
Maximum
Ratings
and
Thermal
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
TC=25oC
TC=100oC
Pulsed Drain Current(Note 1)
TC=25oC
Power Dissipation
TC=25oC
TC=100oC
Continuous Drain Current
TA=25oC
TA=70oC
Power Dissipation
TA=25oC
Power Dissipation
TA=70oC
Single Pulse Avalanche Energy(Note 6)
Operating Junction and Storage Temperature Range
Typical Thermal resistance(Note 4,5) Junction to Case
Junction to Ambient
ï¬ Limited only By Maximum Junction Temperature
SYMBOL
VDS
VGS
ID
IDM
PD
ID
PD
EAS
TJ,TSTG
RθJC
RθJA
LIMIT
-100
+20
-14
-9
-40
60
24
-2.5
-2.0
2.0
1.3
20
-55~150
2.1
62.5
UNITS
V
V
A
W
A
A
W
mJ
oC
oC/W
July 21,2015-REV.00
Page 1
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