PJD14P06-AU Datasheet, PDF (1/8 Pages) Pan Jit International Inc. – 60V P-Channel Enhancement Mode MOSFET

PPJD14P06-AU
60V P-Channel Enhancement Mode MOSFET
Voltage
-60 V Current
-14 A
Features
 RDS(ON), VGS@-10V,ID@-7A<115mΩ
 RDS(ON), VGS@-4.5V,ID@-3.5A<160mΩ
 High switching speed
 Improved dv/dt capability
 Low Gate Charge
 Low reverse transfer capacitance
 Acqire quality system certificate : TS16949
 AEC-Q101 qualified
 Lead free in compliance with EU RoHS 2011/65/EU directive.
 Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
 Case: TO-252 Package
 Terminals : Solderable per MIL-STD-750, Method 2026
 Approx. Weight : 0.0104 ounces, 0.297grams
TO-252
Maximum
Ratings
and
Thermal
Characteristics
o
(T_A=25 C
unless
otherwise
noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current ^{(Note 1)}
Pulsed Drain Current
Single Pulse Avalanche Energy ^{(Note 2)}
Power Dissipation
T_C=25^oC
Derate above 25^oC
Operating Junction and Storage Temperature Range
Typical Thermal resistance
- Junction to Case
- Junction to Ambient ^{(Note 1)}
V_DS
V_GS
I_D
I_DM
E_AS
P_D
T_J,T_STG
R_θJC
R_θJA
 Limited only By Maximum Junction Temperature
LIMIT
-60
+20
-14
-32
42
45
0.3
-55~175
3.33
62.5
UNITS
V
V
A
A
mJ
W
W/ ^oC
o_C
o_C/W
August 3,2015-REV.00
Page 1