PJD13N10A Datasheet, PDF (1/8 Pages) Pan Jit International Inc. – 100V N-Channel Enhancement Mode MOSFET

PPJD13N10A
100V N-Channel Enhancement Mode MOSFET
Voltage
100 V Current
13A
Features
 RDS(ON) , VGS@10V, ID@6.5A<115mΩ
 RDS(ON) , VGS@4.5V, ID@4A<120mΩ
 Advanced Trench Process Technology
 High density cell design for ultra low on-resistance
 Lead free in compliance with EU RoHS 2011/65/EU
directive
 Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
TO-252AA
 Case: TO-252AA Package
 Terminals : Solderable per MIL-STD-750, Method 2026
 Approx. Weight: 0.0104 ounces, 0.297 grams
 Marking: D13N10A
Maximum
Ratings
and
Thermal
Characteristics
o
(T_A=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
T_C=25^oC
T_C=100^oC
Pulsed Drain Current ^{(Note 1)}
T_C=25^oC
Power Dissipation
T_C=25^oC
T_C=100^oC
Continuous Drain Current
T_A=25^oC
T_A=70^oC
Power Dissipation
T_A=25^oC
T_A=70^oC
Single Pulse Avalanche Energy^{(Note 6)}
Operating Junction and Storage Temperature Range
Typical Thermal Resistance^{(Note 4,5)}
Junction to Case
Junction to Ambient
 Limited only By Maximum Junction Temperature
SYMBOL
V_DS
V_GS
I_D
I_DM
PD
I_D
PD
E_AS
T_J,T_STG
R_θJC
R_θJA
LIMIT
100
+20
13
8
52
41
16
2.9
2.3
2.0
1.3
6.1
-55~150
3.05
62.5
September 3,2015-REV.00
UNITS
V
V
A
W
A
A
W
mJ
o_C
o_C/W
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