PJD13N10 Datasheet, PDF (1/8 Pages) Pan Jit International Inc. – 100V N-Channel MOSFET

PPJD13N10 / PJU13N10
100V N-Channel MOSFET
Voltage
100 V Current
13 A
Features
 R_DS(ON), V_GS@10V,I_D@6.5A<115mΩ
 High power and current handing capability
 Low Gate Charge
 Lead free in compliance with EU RoHS 2011/65/EU
directive.
 Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
 Case: TO-252, TO-251AB Package
 Terminals: Solderable per MIL-STD-750, Method 2026
 Approx. Weight: 0.0104 ounces, 0.297 grams(TO-252)
 Approx. Weight: 0.0104 ounces, 0.297 grams(TO-251AB)
 Marking: D13N10(TO-252), U13N10(TO-251AB)
Maximum Ratings and Thermal Characteristics (T_A=25^oC unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulse Avalanche Energy ^{(Note 1)}
Power Dissipation
T_C=25^oC
Derate above 25^oC
Operating Junction andStorage Temperature Range
Typical Thermal resistance
- Junction to Case
- Junction to Ambient
SYMBOL
V_DS
V_GS
I_D
I_DM
E_AS
PD
T_J,T_STG
R_θJC
R_θJA
 Limited only By Maximum Junction Temperature
LIMIT
100
+20
13
52
30
34.7
0.28
-55~150
3.6
110
UNITS
V
V
A
A
mJ
W
W/ ^oC
o_C
o_C/W
March 10,2014-REV.00
Page 1