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| PJD10P10A Datasheet, PDF (1/8 Pages) Pan Jit International Inc. – 100V P-Channel Enhancement Mode MOSFET | |||
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PPJD10P10A
100V P-Channel Enhancement Mode MOSFET
Voltage -100 V Current
-10 A
Features
ï¬ RDS(ON), VGS@-10V,ID@-5A<210mΩ
ï¬ RDS(ON), VGS@-4.5V,ID@-3A<230mΩ
ï¬ High switching speed
ï¬ Improved dv/dt capability
ï¬ Low Gate Charge
ï¬ Low reverse transfer capacitance
ï¬ Lead free in compliance with EU RoHS 2011/65/EU directive.
ï¬ Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
ï¬ Case: TO-252 Package
ï¬ Terminals: Solderable per MIL-STD-750, Method 2026
ï¬ Approx. Weight: 0.0104 ounces, 0.297grams
TO-252
Maximum
Ratings
and
Thermal
Characteristics
o
(TA=25 C
unless
otherwise
noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current(Note 1)
Power Dissipation
Continuous Drain Current
Power Dissipation
Power Dissipation
TC=25oC
TC=100oC
TC=25oC
TC=25oC
TC=100oC
TA=25oC
TA=70oC
TA=25oC
TA=70oC
Operating Junction and Storage Temperature Range
Typical Thermal resistance(Note 4,5) Junction to Case
Junction to Ambient
ï¬ Limited only By Maximum Junction Temperature
SYMBOL
VDS
VGS
ID
IDM
PD
ID
PD
TJ,TSTG
RθJC
RθJA
LIMIT
-100
+20
-10
-6
-40
54
22
-2.0
-1.6
2.0
1.3
-55~150
2.3
62.5
UNITS
V
V
A
W
A
A
W
oC
oC/W
July 21,2015-REV.00
Page 1
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