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PJB75N75 Datasheet, PDF (1/4 Pages) Pan Jit International Inc. – 75V N-Channel Enhancement Mode MOSFET | |||
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PJB75N75
75V N-Channel Enhancement Mode MOSFET
FEATURES
⢠RDS(ON), VGS@10V,IDS@30A=11mâ¦
⢠Advanced Trench Process Technology
⢠High Density Cell Design For Ultra Low On-Resistance
⢠Specially Designed for Converters and Power Motor Controls
⢠Fully Characterized Avalanche Voltage and Current
⢠In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
⢠Case: D2PAK / TO-263 Molded Plastic
⢠Terminals : Solderable per MIL-STD-750,Method 2026
⢠Marking : B75N75
Drain
Gate
Source
Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted )
PARAMETER
Symbol Limit
Drain-Source Voltage
V DS
75
Gate-Source Voltage
VGS
+20
Continuous Drain Current
ID
75
Pulsed Drain Current 1)
ID M
Maximum Power Dissipation
TA =25OC
TA =75OC
PD
Op e ra ti ng J unc ti o n a nd S to ra g e Te mp e ra ture Ra ng e
TJ,TS TG
Avalanche Energy with Single Pulse
IAS=47A, VDD=37.5V, L=0.3mH
EAS
Junction-to-Case Thermal Resistance
RθJ C
350
105
62.5
-55 to +150
660
1.2
Junction-to Ambient Thermal Resistance(PCB mounted)2
RθJ A
62
Note: 1. Maximum DC current limited by the package
Uni ts
V
V
A
A
W
OC
mJ
OC/W
OC/W
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
STAD-JUN.11.2007
PAGE . 1
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