PJA87P03 Datasheet, PDF (1/6 Pages) Pan Jit International Inc. – 30V P-Channel ENHANCEMENT MODE MOSFET

PPJA87P03
30V P-Channel ENHANCEMENT MODE MOSFET
Voltage
30 V
Current
4A
Features
 R_DS(ON), V_GS@-4.5V,I_D@-3A<87 mΩ
 R_DS(ON), V_GS@-10V,I_D@-4.1A<55 mΩ
 Advanced Trench Process Technology
 High Density Cell Design For Ultra Low On-Resistance
 Specially Designed for DC/DC Converters
 Low Gate Charge
 Lead free in comply with EU RoHS 2002/95/EC directives.
 Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
 Case: SOT-23 Package
 Terminals : Solderable per MIL-STD-750, Method 2026
 Apporx. Weight: 0.0003 ounces, 0.0084 grams
 Marking:87
Maximum
Ratings
and
Thermal
Characteristics
o
(T_A=25 C
unless
otherwise
noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Ta=25^oC
Ta=70^oC
Pulsed Drain Current ^{(Note 1)}
Power Dissipation ^{(Note 1)}
T_a=25^oC
T_a=70^oC
Operating Junction and Storage Temperature Range
Thermal resistance
- Junction to Ambient^{(Note 1)}
V_DS
V_GS
I_D
I_DM
P_D
T_J,T_STG
R_θJA
LIMIT
-30
+20
-4
-3.5
20
1.19
0.75
-55 to +150
125
UNITS
V
V
A
A
W
o_C
o_C/W
August 31,2012-REV.00
Page 1