PJA65P03 Datasheet, PDF (1/7 Pages) Pan Jit International Inc. – 30V P-CHANNEL ENHANCEMENT MODE MOSFET

PJA65P03
30V P-CHANNEL ENHANCEMENT MODE MOSFET
VOLTAGE
30 Volts
CURRENT 4 Amperes
FEATURES
• R_DS(ON), V_GS@-2.5V,I_D@-1A<9 m
• R_DS(ON), V_GS@-4.5V,I_D@-4A<65 m
• R_DS(ON), V_GS@-10V,I_D@-4.2A<55 m
• Advanced Trench Process Technology
• High Density Cell Design For Ultra Low On-Resistance
• Specially Designed for DC/DC Converters
• Low Gate Charge
• Lead free in comply with EU RoHS 2002/95/EC directives.
• Green molding compound as per IEC61249 Std. . (Halogen Free)
0.120(3.04)
0. 110 (2 .8 0 )
0.056(1.40)
0.047(1.20)
0.079(2.00)
0.070(1.80)
MECHANICAL DATA
• Case: SOT-23 Package
• Terminals : Solderable per MIL-STD-750,Method 2026
• Apporx. Weight : 0.0003 ounces, 0.0084grams
• Marking : 65
0.004(0.10)
0.000(0.00)
0.020(0.50)
0.013(0.35)
0.008(0.20)
0.003(0.08)
0.044(1.10)
0.035(0.90)
MAXIMUM RATINGS AND THERMAL CHARACTERISTICS (T_A=25^OC unless otherwise noted )
PARAMETER
SYMBOL
Drain-Source Voltage
V _DS
Gate-Source Voltage
V _GS
Continuous Drain Current (Notes 1)
T_A= 2 5 ^OC
I_D
Pulsed Drain Current
I
DM
Power Dissipation (Notes 1)
T_A= 2 5 ^OC
P_D
Typ i ca l The rma l Re si sta nce (Note s 1 )
R_JA
Op e r a ti ng J unc ti o n a nd S to r a g e Te mp e r a tur e Rang e
T_J,T_STG
NOTES:
1. Mounted on 1 in² FR-4 PCB .
LIMIT
-30
+12
-4
-30
1.36
125
-55 to + 150
U N IT S
V
V
A
A
W
O_{C / W}
O_C
July 02,2012-REV.00
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