PJA45N02 Datasheet, PDF (1/6 Pages) Pan Jit International Inc. – 20V N-CHANNEL ENHANCEMENT MODE MOSFET

PJA45N02
20V N-CHANNEL ENHANCEMENT MODE MOSFET
VOLTAGE
20 Volts CURRENT 3.6 Amperes
FEATURES
• R_DS(ON), V_GS@1.8V,I_D@1.5A<87m
• R_DS(ON), V_GS@4.5V,I_D@3.6A<40m
• Advanced Trench Process Technology
• High Density Cell Design For Ultra Low On-Resistance
• Specially Designed for DC/DC Converters
• Low Gate Charge
• ILead free in comply with EU RoHS 2002/95/EC directives.
• Green molding compound as per IEC61249 Std. . (Halogen Free)
0.120(3.04)
0.110(2.80)
0.056(1.40)
0.047(1.20)
0.079(2.00)
0.070(1.80)
MECHANICAL DATA
• Case: SOT-23 Package
• Terminals : Solderable per MIL-STD-750,Method 2026
• Apporx. Weight : 0.0003 ounces, 0.0084grams
• Marking : 45
0.004(0.10)
0.000(0.00)
0.020(0.50)
0.013(0.35)
0.008(0.20)
0.003(0.08)
0.044(1.10)
0.035(0.90)
MAXIMUM RATINGS AND THERMAL CHARACTERISTICS (T_A=25^OC unless otherwise noted )
PARAMETER
S YMB OL
Drain-Source Voltage
V _DS
Gate-Source Voltage
Continuous Drain Current (Notes 1)
Pulsed Drain Current (Notes 1)
Steady-State T_A=25^OC
Steady-State T_A=70^OC
Power Dissipation (Notes 1)
Steady-State T_A=25^OC
Steady-State T_A=70^OC
Typ i c a l The r ma l Re s i s ta nc e (No te s 1 )
V _GS
I
D
I_{D M}
P_D
R _{J A}
Op e ra t i ng J unc ti o n a nd S t o r a g e Te mp e ra t ur e Ra ng e
T_J, T _{S TG}
L IM IT
20
+8
2.9
2.3
10
700
400
178
-55 to + 150
UNITS
V
V
A
A
mW
O_{C / W}
O_C
NOTES:
1. Mounted on minimum pad layout.
2. Mounted on 48cm² FR-4PCB.
March 28,2013-REV.00
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